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| ZXMN2AM832 MPPSTM Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count 3x2mm Dual Die MLP FEATURES * Low On - Resistance * Fast switching speed * Low threshold * Low gate drive * 3mm x 2mm MLP APPLICATIONS * DC-DC Converters * Power Management Functions * Disconnection switches * Motor Control PINOUT 7 ORDERING INFORMATION DEVICE ZXMN2AM832TA ZXMN2AM832TC REEL 7'` 13'` TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units 3mm x 2mm Dual MLP underside view DEVICE MARKING DNA ISSUE 3 - JANUARY 2005 1 SEMICONDUCTORS ZXMN2AM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V GS =10V; T A =25 C (b) (f) @V GS =10V; T A =70 C (b) (f) @V GS =10V; T A =25 C Pulsed Drain Current Continuous Source Current (Body Diode) (b) (f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25C (a) (f) Linear Derating Factor Power Dissipation at TA=25C (b) (f) Linear Derating Factor Power Dissipation at TA=25C (c) (f) Linear Derating Factor Power Dissipation at TA=25C ( d) (f) Linear Derating Factor Power Dissipation at TA=25C (d) (g) Linear Derating Factor Power Dissipation at TA=25C (e) (g) Linear Derating Factor Operating and Storage Temperature Range (a) (f) SYMBOL V DSS V GS ID N-Channel 20 12 3.7 3.0 2.9 UNIT V V A A A A A A W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C I DM IS I SM PD PD PD PD PD PD T j :T stg 13 3.0 13 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g) Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW. SYMBOL R JA R JA R JA R JA R JA R JA VALUE 83.3 51 125 111 73.5 41.7 UNIT C/W C/W C/W C/W C/W C/W ISSUE 3 - JANUARY 2005 SEMICONDUCTORS 2 ZXMN2AM832 TYPICAL CHARACTERISTICS ISSUE 3 - JANUARY 2005 3 SEMICONDUCTORS ZXMN2AM832 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V (BR)DSS I DSS I GSS V GS(th) R DS(on) 20 1 100 0.7 0.09 0.12 0.30 V A nA V I D =250 A, V GS =0V V DS =20V, V GS =0V V GS =12V, V DS =0V I =250 A, V DS =V GS D V GS =4.5V, I D =4A V GS =2.5V, I D =1.5A S V DS =10V,I D =4A g fs 6.2 Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) C iss C oss C rss 299 60 33 pF pF pF V DS =15 V, V GS =0V, f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) t d(on) tr t d(off) tf Qg Q gs Q gd 2.31 2.60 1.55 1.31 3.1 0.7 1.0 ns ns ns ns nC nC nC V DS =10V,V GS =4.5V, I D =4A V DD =10V, I D =4A R G 6.0 , V GS =5V V SD 0.9 0.95 V T J =25C, I S =3.2A, V GS =0V T J =25C, I F =4A, di/dt= 100A/ s Reverse Recovery Time (3) Reverse Recovery Charge (3) t rr Q rr 23 5.65 ns nC NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 3 - JANUARY 2005 SEMICONDUCTORS 4 ZXMN2AM832 TYPICAL CHARACTERISTICS ISSUE 3 - JANUARY 2005 5 SEMICONDUCTORS ZXMN2AM832 TYPICAL CHARACTERISTICS C Capacitance (pF) 400 CISS COSS 200 CRSS VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 0 0.1 1 10 4.5 4.0 ID = 4A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 VDS = 10V 1 2 3 4 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 3 - JANUARY 2005 SEMICONDUCTORS 6 ZXMN2AM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM A A1 A2 A3 b b1 D D2 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETRES MIN. MAX. INCHES MIN. MAX. 0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 12 0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005 3.00 BSC 0.82 1.02 0.118 BSC 0.032 0.040 0.0029 BSC 0 12 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3 - JANUARY 2005 7 SEMICONDUCTORS |
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